• 专利标题:   Method for fabricating graphene-based neuroelectric sensor for monitoring brain activity, involves forming ohmic contacts on graphene mesa structure, and releasing bio-compatible microbial cellulose membrane from handling wafer.
  • 专利号:   US9880148-B1
  • 发明人:   SON K, MOON J, XU Z A, LIMKETKAI B N, KANG J, HUSSAIN T
  • 专利权人:   HRL LAB LLC
  • 国际专利分类:   A61N001/00, C23C016/26, C23C016/455, C23C016/56, G01N033/483, H01L021/02, H01L021/04
  • 专利详细信息:   US9880148-B1 30 Jan 2018 A61N-001/00 201811 Pages: 22 English
  • 申请详细信息:   US9880148-B1 US478129 03 Apr 2017
  • 优先权号:   US971450P, US478129

▎ 摘  要

NOVELTY - The method involves passivating a bio-compatible microbial cellulose membrane (30) with an atomic layer deposition (ALD) of dielectric, or with a bio-compatible polymer. A graphene is transferred over the passivated bio-compatible microbial cellulose membrane. The transferred graphene is patterned. The patterned graphene is etched to form a graphene mesa structure. Ohmic contacts are formed on the graphene mesa structure for source and drain electrodes. The bio-compatible microbial cellulose membrane is released from a handling wafer. USE - Method for fabricating a graphene-based neuroelectric sensor for stimulating and monitoring brain activity. ADVANTAGE - The method enables greatly reducing a data communication bandwidth and simplifies an external reader requirement, and ensures that wireless power rectification efficiency can be drastically improved as a voltage drop across a rectifier is reduced in half. DETAILED DESCRIPTION - The handling wafer is silicon or glass. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a high sensitivity, ultra-low power, and high speed graphene FET sensor for neural activity. Graphene-based neuroelectric sensors (22) Bio-compatible microbial cellulose membrane (30)