• 专利标题:   Fully self-driven graphene transistor used in logic device, has generator that generates controllable source and drain voltages under pressure to regulate carrier concentration generated in graphene channel layer.
  • 专利号:   CN111584612-A
  • 发明人:   SUN Q, MENG Y
  • 专利权人:   BEIJING NANOENERGY NANOSYSTEMS INST
  • 国际专利分类:   G01L001/16, H01L027/02, H01L029/06, H01L029/78
  • 专利详细信息:   CN111584612-A 25 Aug 2020 H01L-029/06 202074 Pages: 19 Chinese
  • 申请详细信息:   CN111584612-A CN10297196 12 Apr 2019
  • 优先权号:   CN10297196

▎ 摘  要

NOVELTY - The transistor has a source-drain voltage between a source (121) and a drain. The drain is provided by a polypyrrole generator (2), which generates a controllable direct current under pressure. A graphene is used as a channel layer (13) and is connected between the source and the drain. The gate voltage is provided by the electromotive force induced by the contact-separation between external objects and the gate. The polypyrrole generator generates controllable source and drain voltages under pressure to regulate the carrier concentration generated in the graphene channel layer. The channel layer performs fully self-driving electrical output under the control of the gate voltage. USE - Fully self-driven graphene transistor used in logic device of sensor array used as electronic skin (claimed). ADVANTAGE - The effect of fully self-driving is realized, the energy consumption is almost zero, which has high integration and sensitivity, and realize dual detection of gesture and pressure simultaneously. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a sensor array. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of the fully self-driven graphene transistor. Polypyrrole generator (2) Base layer (11) Channel layer (13) Source (121) Drain electrode (122)