▎ 摘　　要

NOVELTY - The method involves applying electric field of which electric field intensity is changed along connection direction of a source and a drain to a graphene layer on a substrate such that that the layer is changed along with position of a Dirac point in the connection direction of the source and the drain. Electric conduction type of a graphene transistor (63) is controlled by managing the direction of the electric field. Threshold voltage and intervals of ON state and OFF state of the transistor are controlled by managing intensity distribution of the electric field. USE - Method for manufacturing a unipolar graphene transistor. ADVANTAGE - The method enables applying the electric field of which the electric field intensity is changed along the connection direction of the source and the drain to the graphene layer on the substrate such that that the layer is changed along with the position of the Dirac point in the connection direction of the source and the drain, thus ensuring simple manufacturing process of a unipolar graphene transistor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a unipolar graphene transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a unipolar graphene transistor. Conducting layer (61) Medium layer (62) Graphene transistor (63) Drain electrode (65) Insulation layer (66)