▎ 摘　　要

NOVELTY - Semiconductor device comprises a first level wiring 110 disposed at a first metal level, and including a first line wiring, a first insulating capping film, and a first side wall graphene film 141, an interlayer insulating film 190 which covers the side wall of the first line and capping films, and a second level wiring 210 at a second metal level higher than the first level. The second wiring includes a second via 225 connected to the first and second line wirings, respectively, where the second via penetrates the first capping layer. The first line is made of ruthenium. USE - Semiconductor device. ADVANTAGE - The semiconductor device is capable of improving the performance and reliability of a device by forming a protective film on a wiring line. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of a diagram for explaining a semiconductor device. First level wiring (110) First side wall graphene film (141) First interlayer insulating film (190) Second level wiring (210) Second via (225)