• 专利标题:   Manufacturing a graphene by dipping cathode including metal and anode including graphite into electrolyte, and applying direct current (DC) power supply between cathode and anode where the DC power supply is DC switching power supply.
  • 专利号:   US2019352787-A1, KR2019131219-A, US10858746-B2
  • 发明人:   LEE W, LIM S, HAN J H, WONOHLEE, LIM S M, HAHN J H
  • 专利权人:   UNIV CHONNAM NAT IND FOUND, UNIV CHONNAM NAT IND FOUND, UNIV CHONNAM NAT IND FOUND
  • 国际专利分类:   C01B032/19, C25B001/00, C25B015/02, C25B003/00
  • 专利详细信息:   US2019352787-A1 21 Nov 2019 C25B-015/02 201991 Pages: 9 English
  • 申请详细信息:   US2019352787-A1 US215444 10 Dec 2018
  • 优先权号:   KR055814

▎ 摘  要

NOVELTY - A graphene is manufactured by dipping a cathode including metal and anode including graphite into electrolyte; and applying a direct current (DC) power supply between the cathode and anode, where the DC power supply is a DC switching power supply applying a positive voltage and a negative voltage alternately and repetitively. USE - Manufacture of graphene. ADVANTAGE - The method simply enables a mass production of high purity graphene. High purity graphene can be efficiently manufactured when the ions stacked up between the graphite layered structures are controlled. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the electrochemical device for carrying out manufacture of graphene.