• 专利标题:   Preparing h-BN/graphene/polyvinylidene fluoride composite film, by e.g. performing silane modification to hexagonal boron nitride and graphene, dispersing in solvent, dissolving polyvinylidene fluoride in solvent and pouring into pre-mixed liquid, and casting mixed solution on plane to form film.
  • 专利号:   CN115073783-A
  • 发明人:   DI H, LIN H, SONG Y, SUN J, XIAO Q
  • 专利权人:   BEIJING YUANDA XINDA TECHNOLOGY CO LTD, BEIJING XUTAN NEW MATERIAL TECHNOLOGY CO
  • 国际专利分类:   C08J005/18, C08K003/04, C08K003/38, C08K009/06, C08L027/16, H01G004/18, H01G004/33
  • 专利详细信息:   CN115073783-A 20 Sep 2022 C08J-005/18 202204 Chinese
  • 申请详细信息:   CN115073783-A CN10794391 07 Jul 2022
  • 优先权号:   CN10794391

▎ 摘  要

NOVELTY - Method for preparing an hexagonal boron nitride (h-BN)/graphene/polyvinylidene fluoride (PVDF) composite film involves (a) subjecting silane modification to hexagonal boron nitride to obtain a modified boron nitride containing an organic group, (b) performing silane conversion on the graphene to obtain the modified graphene containing an organosilane group, and (c) dispersing the obtained modified graphene in solvent (A) to obtain pre-mixed liquid, (d) dissolving the PVDF in the solvent 1, pouring it into the pre mixed liquid, and mixing uniformly to obtain mixed solution, (e) casting the mixed solution on the plane to form a film, and gradually heating to remove the solvent to obtain composite film. USE - Preparation method of h-BN/Graphene/PVDF composite film used in capacitor used in power system. Can also be used in high energy storage film capacitor. ADVANTAGE - The method solves the technical problem of compatibility between the filler particles and organic matter. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a hexagonal boron nitride (h-BN)/graphene/polyvinylidene fluoride (PVDF) composite film.