▎ 摘　　要

NOVELTY - A silicene electronic device (100) comprises a silicene material layer (110) having a two-dimensional honeycomb structure formed by silicon atoms, is doped with material of group I, group II, group XVI, and group XVII, and comprises a low-doping concentration region lowly doped with a p-type dopant or a n-type dopant, and a high doping concentration region highly-doped with a p-type dopant or a n-type dopant, and an electrode material layer formed on the high doping concentration region. The silicene material layer comprises a region (r1) formed as a single layer or a bi-layer and a region (r2) formed as a multilayer, and the highly doped region formed in the (r2) region. USE - Silicene electronic device used for switching device e.g. transistor such as field effect transistor. ADVANTAGE - The silicene electronic device has reduced formation of an interface state on a surface of the silicene material layer, since the upper intermediate layer is located between the silicene at layer and the electrode material layer, is manufactured by simple method by dopant-free process on contact region, by reducing an implantation method. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the silicene electronic device. Silicene electronic device (100) Silicene material layer (110) P-type doping regions (111,112,113) Intermediate layers (120,121,122) Graphene layers (130,131,132) Electrode material layers (140,141,142) Electrode material protection layers (150,151,152) Upper gate intermediate layer (161) Upper gate insulating layer (163) Upper gate electrode (165) Lower gate electrode (171) Lower gate insulating layer (173) Lower gate electrode (175)