• 专利标题:   Memristor for memristor-based neural morphology calculation chip, has barrier layer located on functional layer, and upper electrode layer that is located on barrier layer, where functional layer is resistive layer.
  • 专利号:   CN113517391-A
  • 发明人:   LIU M, LV H, ZHENG X, LI X, DONG D, YU J, XU X
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   G06N003/06, H01L045/00
  • 专利详细信息:   CN113517391-A 19 Oct 2021 H01L-045/00 202198 Chinese
  • 申请详细信息:   CN113517391-A CN11019747 24 Sep 2020
  • 优先权号:   CN11019747

▎ 摘  要

NOVELTY - Memristor comprises a lower electrode layer, a functional layer is located on the bottom electrode layer. A barrier layer is positioned on the functional layer, and an upper electrode layer is arranged on the barrier layer. The functional layer has a resistive layer and a resistance layer. USE - Memristor for use in a memristor-based neural morphology calculation chip for realizing electronic synapse and neuron function of an artificial intelligence development. ADVANTAGE - The memristor increases a layer of barrier layer between the functional layer and the upper electrode, thus, by accurately modulating the resistance value of functional layer, the device when the applied erase voltage, when the device voltage is gradually increased, forming unstable filament in the barrier layer, realizing the function of threshold value conversion. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) Memristor-based neural morphology calculation chip. (2) Preparing memristor.