▎ 摘　　要

NOVELTY - Sapphire is used as a substrate, the sapphire substrate is preprocessed, and growth pressure, flow rate and temperature are regulated, such that the graphene is directly grow on the sapphire without using metal as catalyst. Thus, direct epitaxial growth method of graphene is carried out. USE - Direct epitaxial growth method of graphene used for fabrication of device (claimed). ADVANTAGE - The method efficiently provides graphene. The fabrication of device is efficiently carried out using the graphene, by a simple process. The fabricated device has excellent electrical characteristics and reliability.