▎ 摘　　要

NOVELTY - The method involves forming a catalyze membrane on an insulator. A graphene layer is formed on the catalyze membrane. The graphene layer is formed with an electric conduction film that is matched with the insulator. Graphene layer thin changing process is performed. Catalyze membrane removing process is performed. A grate insulation film is formed on a first part of the electric conduction film. A table grate electrode is mounted on an upper part of the grate insulation film. The graphene layer is removed from an upper surface or lower surface of the catalyze membrane. USE - Semiconductor device manufacturing method. ADVANTAGE - The method enables adapting chemistry gas phase growth technique for forming the graphene layer on the catalyze membrane, thus avoiding a channel of the graphene layer since a conductor is fixed between the catalyze membrane and the graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor device.