▎ 摘　　要

NOVELTY - Manufacturing boron-doped reduced graphene, comprises (a) preparing dispersed solution by adding boron oxide to graphene oxide, (b) removing solvent from the dispersed solution to obtain a solid mixture, and (c) heating the solid mixture to obtain boron-doped reduced graphene, where the semiconductor properties and conductivity are adjustable by doping boron on graphene oxide. USE - The reduced graphene is useful as semiconductor with p-type characteristics. ADVANTAGE - The reduced graphene has increased electrical conductivity and stability, and environmentally friendly and economical manufacturing method, which is suitable for large scale production. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for reduced graphene, prepared by the method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic process flow for manufacturing boron-doped reduced graphene (Drawing includes non-English language text).