▎ 摘　　要

NOVELTY - The method for preparing transition metal chalcogenide compound and boron nitride or graphene heterojunction involves growing boron nitride or graphene structure on the surface of the transition metal substrate under vacuum environment, where the boron nitride is obtained by decomposition of borazine or borane, evaporating chalcogen to boron nitride or graphene surface by physical vapor deposition, annealing intercalate chalcogen on the surface of boron nitride or graphene surface and transition metal substrate, and reacting intercalate chalcogen with surface of transition metal substrate to form layered transition metal chalcogen compound, and forming heterojunction of the transition metal chalcogenide compound with boron nitride or graphene. USE - The method is useful for preparing transition metal chalcogenide compound and boron nitride or graphene heterojunction, which is useful in electronic device. ADVANTAGE - The method enables simple preparation of transition metal chalcogenide compound and boron nitride or graphene heterojunction.