• 专利标题:   Formation of graphene layer used as material in e.g. flexible technologies, involves forming polymer layer on catalytic substrate by chemical vapor deposition of graphene precursor, and raising temperature to induce cyclodehydrogenation.
  • 专利号:   WO2021138665-A1, US2022333234-A1
  • 发明人:   SINITSKII A, TORRES A, LI G
  • 专利权人:   UNIV NEBRASKA, NUTECH VENTURES
  • 国际专利分类:   C01B032/186, B01J023/72, B01J037/02, C23C016/26, C23C016/56
  • 专利详细信息:   WO2021138665-A1 08 Jul 2021 202161 Pages: 46 English
  • 申请详细信息:   WO2021138665-A1 WOUS012068 04 Jan 2021
  • 优先权号:   US957058P, US856477

▎ 摘  要

NOVELTY - Formation of a graphene layer involves forming a polymer layer on a catalytic substrate by chemical vapor deposition of a graphene precursor on the catalytic substrate, and raising a temperature of the polymer layer to at least 160 degrees C to induce cyclodehydrogenation of the polymer layer to form a graphene layer on the catalytic substrate. USE - Formation of graphene layer used as material in flexible technologies such as photovoltaics, thin-film technologies, and thin-film transistor technologies, construction, and graphene-based clothing. ADVANTAGE - The method enables formation of graphene with high quality, and reduced damage to the supporting plastic substrate.