• 专利标题:   Growth method of multilayer graphene used for electrons, photoelectrons and catalysis by forming graphene core on substrate by vapor deposition, and changing growth condition, continuously growing, and forming multilayer graphene.
  • 专利号:   CN112299399-A, CN112299399-B
  • 发明人:   LIU Z, PENG H, SUN L, ZHONG S, LI Y, WANG Y, YU Y, CHEN B
  • 专利权人:   BEIJING GRAPHENE INST, UNIV PEKING
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN112299399-A 02 Feb 2021 C01B-032/186 202124 Pages: 12 Chinese
  • 申请详细信息:   CN112299399-A CN10680165 26 Jul 2019
  • 优先权号:   CN10680165

▎ 摘  要

NOVELTY - Growth method of multilayer graphene comprises forming a graphene core on substrate by vapor deposition; and changing the growth condition, continuously growing, and forming multilayer graphene. USE - The method is for growing multilayer graphene used for electrons, photoelectrons and catalysis. ADVANTAGE - The induction effect of the previous layer of graphene on the growth of the next formed layer of graphene is reduced. The multilayer graphene has non-trivial torsion angle, and provides convenience for further exploring the energy band structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for multilayer graphene.