▎ 摘　　要

NOVELTY - Fast chemical vapor deposition growth of single-layer graphene on non-metallic substrates comprises (1) raising non-metallic substrate to a growth temperature of 900-1200 degrees C in a non-oxidizing atmosphere, and maintaining for /(1 minute to form a reaction system, (2) unchanging temperature, and charging the reaction system with carbon source, hydrogen, carrier gas, and water vapor, using chemical vapor deposition technology, the processed substrate reactive growth of graphene on the upper, the growth temperature is 900-1200 degrees C, and the growth time is 20-60 minutes, and (3) after completing reaction, the carbon source and water vapor are turning off and cooling under protection of an inert atmosphere to obtain a single-layer graphene. USE - The method is useful for fast chemical vapor deposition growth of single-layer graphene on non-metallic substrates. ADVANTAGE - The method: reduces defect structure of graphene, improves growth rate of graphene, and avoids adverse effect of conventional transfer process on performance of graphene device.