▎ 摘　　要

NOVELTY - The method involves designing a light waveguide resonant cavity by simulation anlysis. Qth value is selected as high. A convergent process is performed. Light waveguide resonant cavity is formed on a SOI sheet, where a top surface of the SOI sheet is 220nm, and layer thickness of the SOI sheet is 3 micro meter. High temperature annealing process for the SOI sheet is performed to obtain a SOI base micro-ring cavity waveguide. A graphene is transferred to a surface of the SOI micro-ring resonant cavity by using a SOI FIB device. USE - Double-layer graphene electric light modulator manufacturing method. ADVANTAGE - The method enables manufacturing a double-layer graphene electric light modulator in high speed and low power consumption manner. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a double-layer graphene electric light modulator.