▎ 摘　　要

NOVELTY - The method involves providing (S1) a semiconductor substrate. The graphene is formed (S2) on the surface of the semiconductor substrate. The ion implantation is performed (S3) on surface of the defective graphene-forming metal layer to obtain the controllable density graphene defect. The structure is subjected (S5) to an anneal process to form a metal semiconductor alloy layer. USE - Method for preparing metal semiconductor alloy layer. ADVANTAGE - The method improves the contact characteristics of the interface of the semiconductor substrate and a metal semiconductor alloy layer. The contact resistance of the metal-semiconductor alloy layer resistance and the semiconductor substrate is reduced to improve the electric performance. DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart illustrating the method for preparing metal semiconductor alloy layer. (Drawing includes non-English language text) Step for providing semiconductor substrate (S1) Step for forming graphene on the surface of the semiconductor substrate (S2) Step for performing ion implantation on surface of the defective graphene-forming metal layer to obtain the controllable density graphene defect (S3) Step for forming defective graphene on the surface of the metal layer (S4) Step for subjecting structure to an anneal process to form a metal semiconductor alloy layer (S5)