▎ 摘　　要

NOVELTY - The detector comprises a silicon substrate and a silicon dioxide layer (4). The silicon dioxide layer includes a silicon window unit, and a ring of electrodes is arranged on the silicon dioxide layer on the periphery of the silicon window unit. A palladium diselenide layer (2) covers the surface of the silicon window unit. A graphene layer (1) covers the surface of the area surrounded by the silicon window unit and its corresponding electrodes that are covered with a palladium diselenide layer. The graphene layer, the palladium diselenide layer, and the silicon substrate corresponding to the silicon window unit form a graphene/palladium diselenide/silicon heterojunction. The electrode corresponding to the silicon window unit serves as an output. The graphene/palladium diselenide/silicon heterojunction self-driven photodetector is formed. USE - Graphene/palladium diselenide/silicon heterojunction self-driven photoelectric detector. ADVANTAGE - The preparation method is simple. The device is featured with self-driving property, high responsivity and other excellent performance in the visible-near infrared light band. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of the device structure of the graphene/palladium diselenide/silicon heterojunction self-driven photoelectric detector. Graphene layer (1) Palladium selenide layer (2) Gold electrode layer (3) Silicon dioxide layer (4) N-type silicon substrate (5)