• 专利标题:   Using deposition system involves loading wafer into processing chamber equipped with RF system, supplying aromatic hydrocarbon precursor into processing chamber, turning on RF power of RF system to decompose aromatic hydrocarbon precursor into active radicals.
  • 专利号:   US2021217660-A1, CN113106415-A, TW202127519-A, US11232982-B2
  • 发明人:   WU C, NI I, HSU Y, HUANG J, XU Y, WU Z
  • 专利权人:   UNIV TAIWAN NAT, TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD, UNIV TAIWAN NAT
  • 国际专利分类:   C23C016/26, C23C016/505, H01J037/32, H01L021/285, H01L021/768, H01L023/522, H01L023/532, C23C014/06, C23C014/34, H01L021/203, H01L027/092, H01L021/4763
  • 专利详细信息:   US2021217660-A1 15 Jul 2021 H01L-021/768 202182 English
  • 申请详细信息:   US2021217660-A1 US740192 10 Jan 2020
  • 优先权号:   US740192

▎ 摘  要

NOVELTY - Using deposition system involves loading a wafer into a processing chamber equipped with an RF system, supplying an aromatic hydrocarbon precursor into the processing chamber, turning on an RF power of the RF system to decompose the aromatic hydrocarbon precursor into active radicals and produce a graphene layer over a metal layer on the wafer after supplying the aromatic hydrocarbon precursor, and turning off the RF power of the RF system to stop forming the graphene layer after an entirety of the metal layer being covered by the graphene layer. USE - Method for using deposition system. ADVANTAGE - The method provides smaller and more complex circuits, and provides benefits by increasing production efficiency and lowering associated costs. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a deposition system.