▎ 摘　　要

NOVELTY - The structure has a source region (1), a channel region (2) and a drain region (3). The source region and the drain region are formed on the two sides of the channel region. The channel region is made of graphite nano-belt. The source region is made of P-type doped grapheme nanometre belt. The drain region is made of n-type doped graphite nano-belt. The width of the graphite nano-belt of the source region is greater than the width of graphene nanometre belt of the channel region and drain region. USE - Tunnelling field effect transistor structure. ADVANTAGE - The transistor structure has simple device, and is easy to manufacture. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the tunnelling field effect transistor structure. Source region (1) Channel region (2) Drain region (3)