▎ 摘　　要

NOVELTY - Preparing nitride epitaxial structure comprises forming a silicon carbide film on the surface of the substrate, converting the surface layer area of the silicon carbide film to form a graphene layer and growing a nitride single crystal on the surface of the graphene layer to form a nitride epitaxial structure. USE - The method is useful for preparing nitride epitaxial structure. ADVANTAGE - The method can epitaxial high quality single crystal gallium nitride on the single crystal or polycrystalline substrate, and improves the radiating performance of the gallium-nitride-based HEMT device. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: Nitride epitaxial structure; and Gallium nitride-based high electron mobility transistor (HEMT) device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of preparing nitride epitaxial structure (Drawing includes non-English language text).