▎ 摘　　要

NOVELTY - The cell has is Gold bottom electrode (1), Gallium arsenide substrate (2), copper sulfide hydrophobic layer (3), graphene layer (4) and conductive silver paste top electrode (5) that are arranged from top to bottom in sequence. The copper sulfide hydrophobic layer is 10-100 nm. The thickness of the Gold bottom electrode is 80-200 nm. The thickness of the Gallium substrate is 300-600 mu m. The Gallium arsenide substrate is an N-type GaAs substrate. The thickness of the graphene layer is 1-5 atomic thicknesses. The thickness of the top electrode of the conductive silver paste is 0.1-2.5 mu m. USE - Gallium arsenide solar cell. ADVANTAGE - The holes and electrons can be effectively separated and collected by introducing copper sulfide. Device performance in preparation of the solar cell can be improved. Gallium arsenide can be prevented from contacting with water. The number of interface defects and the number of carriers trapped by the defects can be reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing a Gallium arsenide solar cell. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the solar cell that contains the copper sulfide hydrophobic layer. Gold bottom electrode (1) Gallium arsenide substrate (2) Copper sulfide hydrophobic layer (3) Graphene layer (4) Conductive silver paste electrode (5)