▎ 摘　　要

NOVELTY - Copper substrate method for preparing graphene by etching chemical vapor deposition method involves (a) cutting 1.5 cm x 1.5 cm copper foil, and using a plasma cleaner to treat the surface of the copper foil, (b) adding the copper foil, placing it into an ultrasonic cleaning machine, using a nitrogen gun to dry quickly, (c) using CVD method to grow two-dimensional graphene on copper foil, (d) using poly(dimethylsiloxane) (PDMS) as the graphene protective layer, (e) placing the graphene/copper foil/graphene on the homogenizer, performing spin-coating, (f) adding the photoresist/graphene/copper foil/graphene and placing in a vacuum drying oven to heat and curing, (g) placing in the corrosive solution, (h) washing with deionized water, (i) using flexible substrate comprising PDMS, polyethylene terphthalate (PET) as the substrate, and placing the PET on the homogenizer, adding PDMS and dripping it, and (j) transferring the photoresist/graphene to a flexible substrate and drying. USE - The copper substrate method is used for preparing graphene by etching chemical vapor deposition method. ADVANTAGE - The method effectively protects the integrity of graphene. DETAILED DESCRIPTION - Copper substrate method for preparing graphene by etching chemical vapor deposition method comprising using a corrosive liquid used comprising ferric chloride solution, nitric acid solution and ammonia solution, involves (a) cutting 1.5 cm x 1.5 cm copper foil, and using a plasma cleaner to treat the surface of the copper foil, (b) adding the copper foil in step (a) and placing into a mixed solution with a volume ratio of hydrochloric acid and acetone of 20:1, placing it into an ultrasonic cleaning machine, setting the temperature to 36 degrees C, and cleaning for 15 minutes, cleaning twice with absolute ethanol, cleaning with deionized water 3-5 times, and using a nitrogen gun to dry quickly to prevent the copper substrate from being oxidized, (c) at 1050 degrees C and atmospheric pressure, using CVD method to grow two-dimensional graphene on copper foil to obtain graphene/copper foil/graphene, (d) configuring the photoresist, using poly(dimethylsiloxane) (PDMS) as the graphene protective layer, configuring it according to the ratio of curing agent and body of 1:10, and leaving for 1 hour to eliminate air bubbles in the colloid, (e) placing the graphene/copper foil/graphene in the step (c) on the homogenizer, and using a disposable dropper to drop photoresist onto the center of the graphene, dividing the homogenization process is divided into two operating stages, high and low speed at a low speed of 1000 rpm for 9 seconds, and switching to a high speed of 2200 rpm for 30 seconds, performing spin-coating the photoresist evenly and completely onto the graphene surface, (f) adding the photoresist/graphene/copper foil/graphene in the step (c) and placing in a vacuum drying oven to heat and curing the photoresist for 2 hours at 80 degrees C, (g) adding the photoresist/graphene/copper foil/graphene in the step (f) and placing in the corrosive solution in sequence, and placing in a fume hood during corrosion to prevent personnel from inhaling the toxic gas volatilized by the corrosive solution, (h) adding the graphene composite structure in step (g) and washing with deionized water 3-5 times, removing the copper foil attached to the graphene film and the adsorbed impurity ions, and the graphene composite structure is photoresist/graphene, (i) using flexible substrate comprising PDMS, polyethylene terphthalate (PET) as the substrate, and placing the PET on the homogenizer, adding PDMS and dripping it on the center of the PET at low speed of 500 rpm for 6 seconds, performing spin-coating PDMS onto the PET surface, placing in a drying oven for curing for 4 hours at 60 degrees C, and (j) transferring the photoresist/graphene in the step (g) to a flexible substrate and drying.