• 专利标题:   Production of two-dimensional nanomaterial e.g. graphene used in electronic device, involves forming two-dimensional nanomaterial on liquid surface containing molten eutectic compound, of substrate by chemical vapor deposition.
  • 专利号:   WO2015150791-A1, EP3129523-A1, US2017114450-A1
  • 发明人:   BABENKO V, GROBERT N
  • 专利权人:   ISIS INNOVATION LTD, BABENKO V, GROBERT N, UNIV OXFORD INNOVATION LTD
  • 国际专利分类:   C01B031/04, C23C016/00, C23C016/26, C23C016/34, C01B032/182, C01B021/064, C23C016/01, C23C016/30, C23C016/40, C23C016/44
  • 专利详细信息:   WO2015150791-A1 08 Oct 2015 C23C-016/00 201571 Pages: 40 English
  • 申请详细信息:   WO2015150791-A1 WOGB050997 31 Mar 2015
  • 优先权号:   GB005800

▎ 摘  要

NOVELTY - Production of two-dimensional nanomaterial involves forming two-dimensional nanomaterial on a surface of a substrate by chemical vapor deposition. The surface is a liquid surface which comprises a molten eutectic compound. USE - Production of two-dimensional nanomaterial e.g. graphene, graphene derivative e.g. doped graphene, graphene oxide, fluorographene or chlorographene, and boron nitride or transition metal chalcogenide used in electronic device (all claimed) e.g. transparent flexible electrodes, photonic devices, energy storage, gas sensors and filters, transistors, coatings and solar energy, semiconductor, transparent conductor, display e.g. flexible display for computer screen or other visual display unit and photovoltaic cell. ADVANTAGE - The method improves the crystallinity of the nanomaterials because the smooth liquid surface removes the dependence of material growth on the crystallographic orientation of substrate or roughness. The method uses the material capable of forming liquid surface which minimizes the topographic defects on the quality of the materials. The method provides the nanomaterials with low nucleation density and high growth rates, allowing the flakes to grow easily in its natural shape. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) substrate, which comprises a surface comprising a eutectic compound on which the nanomaterial can be formed; (2) substrate precursor, which comprises layer (A) formed of material (A) arranged on layer (B) formed of material (B), in which materials (A) and (B) are capable of reacting to form a eutectic compound at the surface of the substrate; and (3) use of a substrate or a substrate precursor in the production of the nanomaterial by chemical vapor deposition.