▎ 摘　　要

NOVELTY - A nitrogen-doped graphene electrode material preparing method involves growing graphene on a collector material by using plasma enhanced chemical vapor deposition or chemical vapor deposition vacuum apparatus. The graphene material collector is placed in vacuum plasma enhanced chemical vapor deposition apparatus, evacuated, regulated pressure to 100-1000 Pa, followed by adjusting flow rate of nitrogen, controlling vacuum pressure, carrying out bombardment for 1-3 minutes, and cooling naturally under a nitrogen atmosphere after the bombardment ended to obtain the finished product. USE - Method for preparing nitrogen-doped graphene electrode material. ADVANTAGE - The method enables preparing nitrogen-doped graphene electrode material with increased capacitance value and good circulation stability. DETAILED DESCRIPTION - A nitrogen-doped graphene electrode material preparing method involves growing graphene on a collector material by using plasma enhanced chemical vapor deposition or chemical vapor deposition vacuum apparatus to obtain growth surface of graphene material collector. The growth surface of graphene material collector is placed in a vacuum plasma enhanced chemical vapor deposition apparatus, evacuated to a pressure of 5 Pa or less under nitrogen gas flow rate of 5-50 sccm, regulated pressure to 100-1000 Pa and maintained at 300-800 degrees C for 20-30 minutes with a pressure of 100-1000 Pa under a nitrogen atmosphere, followed by adjusting flow rate of nitrogen to 5-100 sccm, controlling vacuum pressure of plasma enhanced chemical vapor deposition apparatus to 200-500 Pa, carrying out bombardment at 300-800 degrees C for 1-3 minutes under radio frequency power of 50-200 W and pressure of 200-500 Pa, and cooling naturally under a nitrogen atmosphere after the bombardment ended to obtain the finished product.