• 专利标题:   Preparation of sulfur-doped graphene thin film by heating and preprocessing metal substrate in atmosphere of reduction protective gas, vacuuming container, and introducing mixed liquid of carbon source and sulfur source.
  • 专利号:   CN102191476-A, CN102191476-B
  • 发明人:   GAO H
  • 专利权人:   UNIV LANZHOU
  • 国际专利分类:   C01B031/02, C23C016/26, C30B025/00, C30B029/02
  • 专利详细信息:   CN102191476-A 21 Sep 2011 C23C-016/26 201210 Pages: 9 Chinese
  • 申请详细信息:   CN102191476-A CN10095599 11 Apr 2011
  • 优先权号:   CN10095599

▎ 摘  要

NOVELTY - Preparation of sulfur-doped graphene thin film by chemical vapor deposition includes heating and preprocessing the metal substrate in atmosphere of reduction protective gas; vacuuming until vacuum degree of container is 0.01-0.001 torr; introducing mixed liquid of carbon source and sulfur source into the container; obtaining sulfur-doped graphene thin film on metal substrate; rapidly cooling the reactor; and conducting post-treatment. USE - Preparation of sulfur-doped graphene thin film (claimed). DETAILED DESCRIPTION - Preparation of sulfur-doped graphene thin film by chemical vapor deposition comprises placing metal substrate into a reactor; completely discharging gas in the reactor by filling with reduction protective gas; heating and preprocessing the metal substrate in atmosphere of reduction protective gas at 400-500 degrees C; heating the metal substrate at 900-1000 degrees C; stopping filling of reduction protective gas; vacuuming until vacuum degree of container is 0.01-0.001 torr; introducing mixed liquid of carbon source and sulfur source into the container; obtaining sulfur-doped graphene thin film on metal substrate; rapidly cooling the reactor at 800 degrees C; stopping filling of carbon source and sulfur source; filling reduction protective gas; continuously reducing the temperature in the reactor to room temperature; taking out the metal substrate having sulfur-doped graphene thin film; spinning polymethylmethacrylate thin film on the surface; removing the metal substrate by a solution in which the metal substrate is dissolved; transferring the composite film of sulfur-doped graphene thin film and polymethylmethacrylate thin film onto the substrate material; and removing polymethylmethacrylate thin film to obtain sulfur-doped graphene thin film. INDEPENDENT CLAIMS are included for: (1) sulfur-doped graphene thin film; and (2) preparation of liquid carbon source and sulfur source comprising mixing powder with hexane; and ultrasonically processing for 20 minutes to obtain uniform and transparent solution.