▎ 摘　　要

NOVELTY - Graphite substrate comprises a graphite disc and multiple annular isolation layer. The graphite disc is a disc. The surface of the graphite disc is provided with multiple grooves for containing the epitaxial wafer, and each of the groove is provided with the annular isolation layer for supporting the epitaxial wafer. The annular isolating layer is a two-dimensional atomic crystal material layer. The annular isolation layer is a graphene layer, a silicene layer, a germanene layer or a hexagonal boron nitride layer. USE - The graphite substrate is useful for manufacturing light emitting diode epitaxial wafer (claimed) in semiconductor field. ADVANTAGE - The graphite substrate which is used to grow the light emitting diode epitaxial wafer can reduce the uneven heating, improve the wavelength uniformity of the epitaxial wafer, and efficiently reduce the generation of cracks in the epitaxial wafer. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a method for manufacturing graphite substrate; and (2) a method for manufacturing light emitting diode epitaxial wafer. DESCRIPTION OF DRAWING(S) - The drawing shows a structure schematic diagram of a graphite substrate. Graphite plate (10) Integrated groove (10a) Annular isolation layer (20)