• 专利标题:   High repetition frequency integrated Q-adjusting microchip laser, has Q-adjusting crystal provided with graphene or Chromium, and first and second cavity mirror formed between two laser resonant cavities.
  • 专利号:   CN110600986-A
  • 发明人:   XUE Y, DING G, ZHANG S
  • 专利权人:   FUJIAN HITRONICS PHOTOELECTRICITY CO
  • 国际专利分类:   G01S007/481, G01S007/484, H01S003/102, H01S003/11, H01S003/137
  • 专利详细信息:   CN110600986-A 20 Dec 2019 H01S-003/11 202001 Pages: 6 Chinese
  • 申请详细信息:   CN110600986-A CN10984303 16 Oct 2019
  • 优先权号:   CN10984303

▎ 摘  要

NOVELTY - The laser has a pump source for providing a pump light and pumps by using a pulse pumping mode. A coupling system couples the pump light into a laser cavity. A gain medium generates a required 905 nm laser radiation. The gain medium is provided with a titanium-doped sapphire crystal. A Q-adjusting crystal generates the desired Q-switched pulse. The Q-adjusting crystal is provided with graphene or Chromium. The first cavity mirror and a second cavity mirror is formed between two laser resonant cavities and utilizes a 905 nm laser to form an oscillation output. USE - High repetition frequency integrated Q-adjusting microchip laser. ADVANTAGE - The laser utilizes for short service life of titanium-doped sapphire crystal level as the gain medium, and graphene with short recovering time as Q-adjusting crystal, adopts the pulse pumping mode to obtain stable and adjustable height of high repetition frequency and a short pulse width. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a high repetition frequency integrated q-adjusting microchip laser.