• 专利标题:   Atomic-level mechanical peeling cleaning of graphene surface used for field effect transistor or electric conduction film by taking target substrate, adhering graphene, soaking in organic solvent, and dissolving graphene surface.
  • 专利号:   CN104495812-A, CN104495812-B
  • 发明人:   JIN Z, PENG S, WANG X, ZHANG D, WANG S, SHI J
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI, INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104495812-A 08 Apr 2015 C01B-031/04 201542 Pages: 13 Chinese
  • 申请详细信息:   CN104495812-A CN10764087 11 Dec 2014
  • 优先权号:   CN10764087

▎ 摘  要

NOVELTY - Atomic-level mechanical peeling cleaning of graphene surface comprises taking target substrate, adhering graphene, soaking in organic solvent comprising tetrahydrofuran, toluene, butanone and/or ethyl acetate, and dissolving graphene surface residue. USE - Method for atomic-level mechanical peeling cleaning of graphene surface used for field effect transistor or electric conduction film (claimed). ADVANTAGE - The method maintains initial performance of graphene, maintains high quality, recycles organic solvent and saves energy. It does not pollute the environment. DESCRIPTION OF DRAWING(S) - The drawing shows a process flow diagram of atomic-level mechanical peeling cleaning of graphene surface (Drawing includes non-English language text).