▎ 摘　　要

NOVELTY - A dopant is selectively applied to a channel region of a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility of field-effect transistor device. Thus, graphene and nanotube thin-film field-effect transistor device is doped. USE - Doping of graphene and nanotube thin-film field-effect transistor device used for electronic device. ADVANTAGE - The doping of graphene and nanotube thin-film field-effect transistor device is enabled with improved electronic mobility. The tube resistance and flake resistance of transistor device are reduced. The dopant molecule forms thick layer and electron transmission is prevented from metal. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of dual-gate carbon nanotube thin-film field-effect transistor device. Gate (100) Gate electric (120) Carbon nanotube or carbon nanotube film (140) Metal portions (162,164) Gated undoped region (500)