▎ 摘　　要

NOVELTY - Preparing single crystal domain and polycrystalline domain graphene comprises heating graphene film to 130-150℃ under an air atmosphere, and annealing for 5-10 minutes to obtain single-crystal domain and polycrystalline domain graphene. The preparation of graphene film comprises (A) heating substrate at 1030-1050℃ under nitrogen atmosphere for annealing, where the flow rate of nitrogen gas is 200-250 sccm, (B) continue conveying nitrogen, methane and hydrogen, and growing graphene film on substrate, where the flow rate of hydrogen is 18-20 sccm, and the flow rate of methane is 8-10 sccm, and (C) stop conveying methane, and cooling to room temperature to obtain graphene film. The substrate is copper foil. USE - The method is useful for preparing single crystal domain and polycrystalline domain graphene in technical field of basic research and graphene. ADVANTAGE - The method: is simple and easy to control experimental operations; and has easily available raw material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for single crystal domain and polycrystalline domain graphene, prepared by above method.