▎ 摘　　要

NOVELTY - Preparing doped graphene nano with optoelectronic device comprises preparing the doped graphene nano with providing a copper substrate, forming nickel film layer on the copper substrate, selecting a specific area on the nickel film layer, injecting N-type doping element in specific area, placing in a tubular furnace, firstly mechanically vacuumizing, transferring the nano material the doped graphene nano belt prepared into alcohol to form a suspension, volatilizing the alcohol, transferring the electrode pattern coated with a light-sensitive photoresist on the silicon chip. USE - The method is useful for preparing doped graphene nano with optoelectronic device (claimed). ADVANTAGE - The method is simple and saves the manufacturing time of the device. DETAILED DESCRIPTION - Preparing doped graphene nano with optoelectronic device comprises (a) preparing the doped graphene nano with providing a copper substrate, forming nickel film layer on the copper substrate, selecting a specific area on the nickel film layer, injecting N-type doping element in specific area, B type doped elements and P-type doping element to respectively form the N type doped element area, B type doping element area and rich P type doping element region, where the doping element after injection of the copper substrate for first stage heat, placing in a tubular furnace, firstly mechanically vacuumizing the furnace, after the air pressure is reduced to below 20Pa, opening the molecular pump to 103 Pa, heating the furnace cavity and continuously introducing argon-hydrogen mixed gas, gas flow rate constant is 20 sccm and maintaining the pressure at 100Torr, so that the copper substrate and the nickel film to form copper-nickel alloy substrate, so that injected into the nickel film layer specific region of N type doped element, B-type doping element and a P-type doping element on the surface of the copper-nickel alloy substrate, where the second stage heat preservation under the argon hydrogen mixed gas environment to the rich N type doped element region and the rich P type doping element region by N-type doped graphene, B type doped graphene and P type doped graphene, slowly cooling to room temperature, (b) transferring the nano material the doped graphene nano belt prepared into alcohol to form a suspension, placing the suspension drop on the silicon substrate with an insulating layer, preventing on the glue baking table baking, volatilizing the alcohol, repeating for 3-5 times, until the nano with transferred to the substrate, (c) transferring the electrode pattern coated with a light-sensitive photo resistance on the silicon chip, light through the mask pattern in the mask is transferred on the photo resistance, taking the substrate with the exposed resist in the developing liquid in the reaction, removing the dissolved part, leaving a hole under the photolithographic layer, pattern corresponding to the hole and mask, and (d) preparing electrode of the electrode deposited nano materials.