▎ 摘　　要

NOVELTY - Low-temperature substrate etching solution comprises hydrochloric acid with a concentration of 0.7-1.3 mol/l, and hydrogen peroxide with oxidation reduction potential of 630-680 mv. USE - The substrate etching solution is useful for preparing graphene by chemical vapor deposition (CVD) method (claimed). ADVANTAGE - The substrate etching solution adopts etching liquid formulation of low acid and etching method of low temperature, mild etching environment, good remains intact and the conductivity of the graphene, thus to realize large scale preparation and subsequent use of stable graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparation of the low temperature etching method for graphene growth substrate prepared by chemical vapor deposition (CVD) method comprising placing the metal substrate with a graphene to be etched into the above mentioned etching solution, soaking the metal substrate can be completely etched.