• 专利标题:   Composite dielectric film material has composite dielectric film located on surface of substrate, and comprising compounded polyvinylidene fluoride and graphene.
  • 专利号:   CN102729562-A
  • 发明人:   CHEN Y, LONG J, XU J, YANG Y, YANG W, WANG C
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   B32B027/20, B32B027/30, C08K003/04, C08L027/16
  • 专利详细信息:   CN102729562-A 17 Oct 2012 B32B-027/30 201319 Pages: 5 Chinese
  • 申请详细信息:   CN102729562-A CN10179758 04 Jun 2012
  • 优先权号:   CN10179758

▎ 摘  要

NOVELTY - A composite dielectric film material comprises a substrate, and a composite dielectric film located on surface of the substrate. The composite dielectric film comprises compounded polyvinylidene fluoride (balance) and graphene (0.5-3 mass%). USE - A composite dielectric film material. ADVANTAGE - The composite dielectric film material has simple and easy to control preparation, is cheap, and has higher dielectric constant than pure polyvinylidene fluoride film material while having same flexibility and workability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of preparing the composite dielectric film material comprising mixing an organic solvent and polyvinylidene fluoride powder to obtain an organic solution having a concentration of not greater than 5 mass%, adding graphene powder (0.5-3 mass%), subjecting to ultrasonic dispersion, spraying obtained solution to a substrate, subjecting to ultrasonic atomization process at 20-100 degrees C, and drying at 40-100 degrees C for 2-5 hours.