▎ 摘　　要

NOVELTY - Preparation of graphene nanoribbon based on copper (Cu) film-assisted annealing carbon (C) injection includes growing carbide layer on washed silicon (Si) substrate chip; growing a cubic silicon carbide (3C-SiC) heteroepitaxial film; manufacturing a mask plate consisting of an isolating belt; injecting C ions into an ion injection band area in 3C-SiC sample wafer by the mask plate; heating the 3C-SiC sample wafer in an epitaxial furnace; pyrolyzing 3C-SiC in the ion injection band area to generate carbon film; placing on Cu film; placing in argon (Ar) gas; and annealing. USE - Preparation of graphene nanoribbon (claimed) useful for manufacturing microelectronic device. ADVANTAGE - The method has lower cost, higher safety, and lower pyrolysis temperature of 3C-SiC; and provides graphene nanoribbon with good continuity. DETAILED DESCRIPTION - Preparation of graphene nanoribbon based on Cu film-assisted annealing C injection comprises: (A) standard washing 4-12-inch Si substrate chip; (B) placing the washed substrate chip into chemical vapor deposition (CVD) system reaction chamber; and vacuumizing the reaction chamber at 10-7 mbar; (C) gradually heating a reaction chamber to carbonization temperature of 1000-1200 degrees C under hydrogen (H2) protection; blowing propane (C3H8) at 30 ml/minute; carbonizing the substrate for 4-8 minutes; and growing a carbide layer; (D) after instantly heating the reaction chamber to 1200-1350 degrees C, blowing C3H8 and silane (SiH4) for 30-60 minutes; gradually cooling to room temperature under H2 protection; and finishing the growth of cubic silicon carbide (3C-SiC) heteroepitaxial film; (E) manufacturing a mask plate consisting of an isolating belt having a width of 100-200 nm and ion injection width of 50-200 nm; (F) injecting 5x 1014-5x 1016 cm-2 C ions with an energy of 15-45 keV into an ion injection band area for the 3C-SiC sample wafer by the mask plate; (G) placing the 3C-SiC sample wafer injected with C ions into an epitaxial furnace; regulating the pressure in the epitaxial furnace at 0.5-1x 10-6 Torr; blowing Ar gas at 500-800 ml/minute into the furnace; heating at 1200-1300 degrees C; keeping at constant temperature for 30-90 minutes; and pyrolyzing 3C-SiC in the ion injection band area to generate carbon film; and (H) placing the generated carbon film sample piece on the Cu film; placing them in Ar gas with flow rate of 20-100 ml/minute; annealing for 10-20 minutes after heating at 900-1200 degrees C; regenerating the graphene nanoribbon by the carbon film; taking out Cu film; and obtaining nanomaterial mutually consisting of isolating belt and graphene nanoribbon on the epitaxial 3C-SiC.