▎ 摘　　要

NOVELTY - The method comprises forming a poly(dimethylsiloxane) (PDMS) mold, a PDMS layer and a polystyrene (PS) layer, where the PDMS mold is coated with a PS-PDMS block copolymer, forming a PDMS pattern, imprinting the PDMS pattern, the PS layer and the PDMS layer on a graphene film, removing the PS layer and the PDMS layer to form the PDMS pattern on the graphene film, and patterning the graphene film. The step of forming the PDMS pattern comprises forming the PDMS pattern on an upper portion and a lower portion of the PDMS layer and the PS layer, and heat-treating a PS-PDMS block copolymer film. USE - The method is useful for manufacturing a graphene quantum dot that is useful for manufacturing a quantum dot light emitting device (all claimed), and useful in fields of nanoelectronics, sensor, battery, super capacitor and hydrogen storage. ADVANTAGE - The method is capable of manufacturing the graphene quantum dot in a reliable manner. DETAILED DESCRIPTION - The method comprises forming a poly(dimethylsiloxane) (PDMS) mold, a PDMS layer and a polystyrene (PS) layer, where the PDMS mold is coated with a PS-PDMS block copolymer, forming a PDMS pattern, imprinting the PDMS pattern, the PS layer and the PDMS layer on a graphene film, removing the PS layer and the PDMS layer to form the PDMS pattern on the graphene film, and patterning the graphene film. The step of forming the PDMS pattern comprises forming the PDMS pattern on an upper portion and a lower portion of the PDMS layer and the PS layer, and heat-treating a PS-PDMS block copolymer film. The heating step is performed at a temperature of 100-200 degrees C. The removing step comprise firstly removing the lower portion of the PDMS layer by first etching, secondly removing the upper portion of the PDMS layer by a second etching, and forming the oxidation PDMS pattern after removing the PS layer by plasma processing, where the first etching and the second etching are performed using the tetrafluoromethane reaction gas. The plasma processing is carried out by oxygen plasma treatment. The method further comprises removing the oxidation PDMS pattern after the step of patterning the graphene film. The step of removing the oxidation PDMS pattern uses a buffered oxide etchant The graphene film is produced by mounting a substrate within a chamber, injecting the nitrogen gas and carbon gas within the chamber, reducing graphene to the oxidation graphene film by irradiating, and forming the oxidation graphene film on the substrate. The irradiating step uses a laser, and increases a surface temperature of the oxidation graphene film to 1000-3000K. An INDEPENDENT CLAIM is included for a method for manufacturing a quantum dot light emitting device.