• 专利标题:   Preparing graphene nanopores comprises growing graphene by chemical vapor deposition, preparing graphene layer on metallic copper thin film, etching back surface of graphene coated metallic copper thin film and etching with acid solution.
  • 专利号:   CN103224232-A, CN103224232-B
  • 发明人:   FU Y, GUO J, HUANG R, LI C, REN L, ZHAO H, WEI Z, ZHANG X, HU B, ZHOU M
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103224232-A 31 Jul 2013 C01B-031/04 201378 Pages: 7 Chinese
  • 申请详细信息:   CN103224232-A CN10143368 23 Apr 2013
  • 优先权号:   CN10143368

▎ 摘  要

NOVELTY - Preparing graphene nanopores comprises (i) growing graphene by chemical vapor deposition using metallic copper thin film as catalyst, preparing graphene layer on the metallic copper thin film by introducing hydrogen and argon gas, heating, annealing, carrying out high temperature pyrolysis, and collecting graphene coated metallic copper thin film; (ii) etching back surface of the graphene coated metallic copper thin film; (iii) adding into an acid solution, etching to form defect structure on the graphene, and forming graphene nanapores; and (iv) transferring graphene nanapores to a substrate. USE - The graphene nanopores are useful in detecting and identifying electrochemical and biological single molecules. ADVANTAGE - The graphene nanopore: has aperture size from few nanometers to hundred nanometers; has high precision and single atomic level hole depth; is suitable for chemical modification and conducts electricity; and has long service life and is economical. DETAILED DESCRIPTION - Preparing graphene nanopores comprises (i) growing graphene by chemical vapor deposition using metallic copper thin film as catalyst, preparing graphene layer on the metallic copper thin film by introducing hydrogen and argon gas, heating to 600-1100 degrees C, annealing for a period of time, then introducing methane, ethylene or acetylene as carbon source, carrying out high temperature pyrolysis for growing graphene under the catalysis of metallic copper thin film, cooling to room temperature and collecting the graphene coated metallic copper thin film from the reaction furnace; (ii) etching back surface of the graphene coated metallic copper thin film using oxygen plasma etching technology; (iii) adding into an acid solution, etching to form defect structure on the graphene, and forming graphene nanapores at the corresponding position; and (iv) transferring the graphene nanapores to a substrate.