▎ 摘　　要

NOVELTY - Method for growing gallium nitride single crystal involves (1) selecting nanosheet solution as the initial solution for the two-dimensional coating mask, (2) adding an organic solvent to the nanosheet solution, and adding polyvinylpyrrolidone as a viscosity modifier to adjust the viscosity of nanosheet solution, (3) using spin coater to adsorb the substrate for gallium nitride growth and dropping the precursor solution, depositing gallium nitride seed layer on the gallium nitride growth substrate, (4) transferring two-dimensional material-coated substrate to a tubular atmosphere furnace for heat treatment under an inert gas atmosphere for a period of time to obtain a two-dimensional coated mask substrate assisted by high temperature heat treatment, (5) growing gallium nitride single crystals on two-dimensional coated mask substrates assisted by high temperature heat treatment using the hydride vapor phase epitaxy method, (6) lowering temperature after the growth. USE - Method for growing gallium nitride single crystal by high temperature heat treatment assisted two-dimensional coating mask substrate. ADVANTAGE - The two-dimensional coating material effectively blocks the extension of dislocations in the crystal, improves the crystal quality during continuous growth of the crystal. DETAILED DESCRIPTION - Method for growing gallium nitride single crystal involves (1) selecting nanosheet solution as the initial solution for the two-dimensional coating mask, (2) adding an organic solvent to the nanosheet solution, and adding polyvinylpyrrolidone as a viscosity modifier to adjust the viscosity of nanosheet solution and the concentration of the nanosheet solution to obtain a precursor solution, (3) using spin coater to adsorb the substrate for gallium nitride growth and dropping the precursor solution, increasing and rotating speed of spin coater rapidly at speed for a period of time to uniformly disperse the precursor solution to form a film and coating it on the substrate for gallium nitride growth, depositing gallium nitride seed layer on the gallium nitride growth substrate, (4) transferring two-dimensional material-coated substrate to a tubular atmosphere furnace for heat treatment under an inert gas atmosphere for a period of time, to remove the viscosity modifier and form hexagonal annealing pits on the substrate to obtain a two-dimensional coated mask substrate assisted by high temperature heat treatment, (5) growing gallium nitride single crystals on two-dimensional coated mask substrates assisted by high temperature heat treatment using the hydride vapor phase epitaxy method, (6) lowering temperature after the growth.