▎ 摘　　要

NOVELTY - Preparation of patterned graphene material includes carving on silicon dioxide (SiO2) mask a desired device substrate to expose cubic silicon carbide (3C-SiC) and form a window, placing the patterned substrate in a quartz tube, heating, introducing argon (Ar) and chlorine (Cl2) gas mixture into the quartz tube, reacting Cl2 with the exposed SiC, forming carbon film, placing in buffered hydrofluoric acid solution to remove graphics outside the SiO2 mask, electron beam depositing nickel (Ni) layer, annealing, and removing the Ni film. USE - Preparation of patterned graphene material (claimed) used for manufacturing base component. ADVANTAGE - The method achieves stable graphic graphene electron mobility and good continuity, does not require etching, and can be directly used for manufacturing base component. DETAILED DESCRIPTION - Preparation of patterned graphene material comprises cleaning silicon carbide (SiC) wafer surface to remove pollutant, conducting plasma-enhanced chemical vapor deposition (PECVD) method to deposit silicon dioxide (SiO2) layer having a thickness of 0.5-1.0 mu m to be used as a mask, coating the SiO2 mask surface with a layer of photoresist, carving on the mask a desired device substrate to expose 3C-SiC and form a window, placing the patterned substrate in a quartz tube, heating at 700-1100 degrees C, introducing argon (Ar) and chlorine (Cl2) gas mixture into the quartz tube for 3-8 minutes, reacting Cl2 with the exposed SiC, forming carbon film, placing in buffered hydrofluoric acid solution to remove graphics outside the SiO2 mask, electron beam depositing nickel (Ni) layer having a thickness of 400-600 nm, annealing at 1000-1200 degrees C and Ar gas flow rate of 30-90 standard cm3/minute (sccm) for 10-30 minutes, removing the Ni film by a mixture of hydrochloric acid (HCl) and copper sulfate (CuSO4), and obtaining the product.