• 专利标题:   Sewing machine movement artifact graphene flexible brain capacitive electrode, has conduction sponge fixed with buffer layer, graphene coating provided with contact face layer, and insulation fabric fixed with insulation shielding layer.
  • 专利号:   CN105615880-A
  • 发明人:   CHEN D, CHEN X, HUANG Z, XIONG F, LAWO M
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   A61B005/0478
  • 专利详细信息:   CN105615880-A 01 Jun 2016 A61B-005/0478 201643 Pages: 10 Chinese
  • 申请详细信息:   CN105615880-A CN10847132 27 Nov 2015
  • 优先权号:   CN10847132

▎ 摘  要

NOVELTY - The electrode has a flexible insulation fabric provided with a base layer. A first reinforcing layer is provided with a first restrain movement pseudo-trace layer. A electric conduction sponge is fixed with a first buffer layer. An insulation rubber plate is provided with a filling layer and a second reinforcing layer. A second buffer layer is provided with a movement inhibition pseudo-trace layer. The electric conduction sponge is fixed with the second buffer layer. A graphene coating is provided with a contact face layer. The insulation fabric is fixed with an insulation shielding layer. USE - Sewing machine movement artifact graphene flexible brain capacitive electrode. ADVANTAGE - The electrode adopts flexible electrode material to prevent a skin from being damaged and ensure long time wearing utilizing effect. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a sewing machine movement artifact graphene flexible brain capacitive electrode.