▎ 摘　　要

NOVELTY - This utility model aims at providing a kind of graphene nanometre belt field effect transistor, comprising a substrate, a channel layer, a gate dielectric layer HfO2, the top of the gate dielectric layer HfO2, a source electrode, a drain electrode and a top gate electrode, wherein the channel layer is a channel layer is made of graphite nano-belt is made of the top gate dielectric layer and the gate dielectric layer are respectively located at the upper side and lower side of the channel layer, a substrate with a gate dielectric layer, a source electrode and a drain electrode are respectively located at the two ends of the channel layer, a top gate electrode on a gate dielectric layer on the top, the width of the channel layer is less than 10nm. This utility model of the switch current ratio as high as 107, mobility of the channel electronics 300cm2/Vs.