• 专利标题:   Quantum dot thin film based on two-dimensional material for saturable absorber that is utilized in ultrafast passively mode-locked laser, comprises quantum dot such as graphene quantum dot and topological insulator quantum dot.
  • 专利号:   CN106099632-A
  • 发明人:   ZHANG H, WANG Z, WANG K
  • 专利权人:   UNIV SHENZHEN
  • 国际专利分类:   H01S003/098
  • 专利详细信息:   CN106099632-A 09 Nov 2016 H01S-003/098 201709 Pages: 11 Chinese
  • 申请详细信息:   CN106099632-A CN10598990 27 Jul 2016
  • 优先权号:   CN10598990

▎ 摘  要

NOVELTY - A quantum dot thin film based on a two-dimensional material comprises quantum dot such as graphene quantum dot, a topological insulator quantum dot, a transition metal sulfide quantum dot, and a black phosphorus quantum dot, where size of the quantum dot is not more than 10 nm. USE - Quantum dot thin film based on a two-dimensional material for a saturable absorber that is utilized in ultrafast passively mode-locked laser such as all-fiber laser or all-solid-state laser (all claimed). ADVANTAGE - The material has strong absorption to the laser in the energy band, and improved stability of the laser. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for preparing quantum dot thin film based on a two-dimensional material (2) a saturable absorber (3) an ultrafast passively mode-locked laser.