▎ 摘　　要

NOVELTY - The method involves providing a top silicon layer with a SOI substrate. The SOI substrate is provided with a crystal orientation part. A rear surface of the top silicon layer is etched. A surface of the top silicon layer is exposed by an insulating layer. A platform frame is formed with a groove. A surface of the platform frame is provided with a graphene segregation unit. Temperature of a segregation carbon metal solid solution is reduced for complete graphene preparation process. A metal nano-particle is formed as nickel Nano particles or copper Nano particles. USE - Controllable industrial graphene metal nano-meter structure array preparation method. ADVANTAGE - The method enables preparing graphene array with high controllability and reliability, realizing distribution array graphene bonding process with high precision silicon small angle, general semiconductor preparation process in a convenient manner and graphene metal nano-meter structure array preparation process in a simple manner, and providing obvious effect. DETAILED DESCRIPTION - Thickness of the top silicon layer is about 5nm. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a controllable industrial graphene metal nano-meter structure array.