▎ 摘　　要

NOVELTY - The insulating sheet has heterogeneous laminated structure, graphene sheet, and hexagonal boron nitride sheet which is arranged on the graphene sheet. A root mean square (RMS) surface roughness of the hexagonal boron nitride is set to 0.5 nm or less in a region having an area of about 200nm200 nm or less. The longitudinal and transverse lengths of of the hexagonal boron nitride are about 1 mm or more. USE - Insulating sheet for electrical device (claimed) such as sensor, bipolar junction transistor (BJTs), FETs, heterojunction bipolar transistors (HBTs), single electron transistors, LEDs, and organic LEDs. ADVANTAGE - Since the insulating sheet is provided with heterogeneous laminated structure, more stable and improved performance is obtained. The blocking layer is included between the substrate and the metal catalyst layer to prevent a reduction in formation efficiency of the graphene sheet by the reaction of the metal catalyst with the substrate. Since the h-BN sheet is formed by sequentially providing raw materials in a single reactor, the yield of insulating sheet is improved and energy and time required during the manufacturing of the insulating sheet is reduced. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) method of manufacturing insulating sheet having a heterogeneous laminated structure; and (2) electrical device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the FET. Substrate (311) Graphene channel layer (313) Gate electrode (315) Drain electrode (316) Insulating layer (317)