▎ 摘　　要

NOVELTY - Chemical process for synthesis of cobalt tungstate/reduced graphene oxide material on conducting substrate, involves: (a) immersing conducting substrate in cationic precursor (cobalt) solution for 10 - 30 seconds, to form uniform layer of cobalt ions on the substrate surface, the concentration of cobalt salts: hydrated cobalt chloride (CoCl2.6H2O), is 0.01 - 0.5 M; (b) rinsing substrate in double distilled water for 10 -30 seconds; (c) immersing substrate in anionic precursor (tungstate salts) solution for 10 - 30 seconds for reaction of tungstate ions with pre-adsorbed cobalt ions, to form cobalt tungstate thin film on conducting substrate surface, the sodium tungstate salt (NaWO4) concentration is 0.1 - 1.0 M; (d) again rinsing substrate in double distilled water for 15 - 30 seconds. The said steps (a) to (d) are repeated 50 - 90 times to produce good quality, uniform and adherent cobalt tungstate (CoWO4)/reduced graphene oxide (rGO) composite thin film of desired thickness. USE - Method is used for preparing cobalt tungstate/reduced graphene oxide electrode material used in advanced application such as electrocatalysis. ADVANTAGE - The method is a simple, inexpensive and convenient process which enables large area deposition of prepared cobalt tungstate/reduced graphene oxide electrode material on substrate. The low temperature conditions of the process, enable to use different types of substrates such as metal, semiconductor, and insulator. The method enables extremely easy way, to dope film with virtually any element in any proportion, by merely adding it in some form of cationic solution, without need for high quality targets and/or substrates and vacuum conditions at any stage. The deposition rate and the thickness of the film are easily controlled over a wide range, by changing the deposition cycles, and the preparative parameters are easily controlled.