▎ 摘　　要

NOVELTY - Graphene is epitaxially grown on a silicon surface of 4 hexagonal (4H)-silicon carbide (SiC) by cleaning the silicon surface of 4H-SiC to remove organic residue and ionic pollutant from the surface; then introducing hydrogen gas and propane to etch the surface of 4H-SiC through hydrogen to eliminate surface scratch and form regular step-like strips; then removing an oxide from the surface caused by hydrogen etching; and heating the surface in the presence of argon gas to evaporate the silicon atoms so that the carbon atoms can reconstruct on the surface to make epitaxial graphene. USE - Method for epitaxial growth of graphene on a silicon surface of 4 hexagonal (4H)-silicon carbide (SiC) (0001) (claimed). The method can be used for making an epitaxial graphene material. ADVANTAGE - The method solves the problems that the graphene on the silicon surface of 4H-SiC through epitaxial growth is small in area and low in evenness. DETAILED DESCRIPTION - Epitaxial growth of graphene on a silicon surface of 4 hexagonal (4H)-silicon carbide (SiC) includes: (A) cleaning the silicon surface of 4H-SiC (0001); (B) placing a 4H-SiC sample in a chemical vapor deposition (CVD) furnace chamber that has a vacuum degree of 2.4x 10-6 mbar, then introducing hydrogen gas at a flow rate of 60-100 L/minute and heating them to 1400-1500 degrees C, introducing propane at a flow rate of 8-12 ml/minute and heating them to 1500-1650 degrees C, and keeping the heat for 10-20 minutes at 90-100 mbar to eliminate surface scratch of the sample and to form regular step-like strips; (C) placing the 4H-SiC sample in the CVD furnace chamber, then introducing hydrogen gas at a flow rate of 15-25 L/minute, heating them to 950-1050 degrees C and keeping the heat for 6-10 minutes, then reducing the temperature to 840-860 degrees C, introducing propane at a flow rate of 0.5 ml/minute, and keeping the heat for 1-5 minutes to eliminate an oxide from the surface caused by hydrogen etching; and (D) introducing argon gas to the furnace chamber at a flow rate of 1-3 L/minute at 890-910 mbar, heating the system to 1590-1610 degrees C, and keeping for 30-60 minutes to finish the epitaxial growth of graphene.