▎ 摘　　要

NOVELTY - Manufacture of radio frequency transistor graphene comprises forming buried source with silicon dioxide layer on the substrate through photo-etching and evaporation processing to obtain leakage electrode, forming substrate/graphene two-dimensional material layer on substrate, photo-etching to obtain specific image, depositing grate insulation layer, depositing grid electrode on the upper grate insulation layer, taking nanowire core-shell structure to cover grid electrode surface, heating nanowire, top gate forming, and vapor depositing. USE - Method for manufacturing radio frequency transistor graphene (claimed). ADVANTAGE - The method has low cost, uses electrostatic spinning nanowire core-shell structure as mask plate, replaces expensive electron beam lithography technique finish grade insulation layer and grid electrode and etching manufacture, and realizes high performance manufacture. DETAILED DESCRIPTION - Manufacture of radio frequency transistor graphene comprises forming buried source with silicon dioxide layer on the substrate through photo-etching and evaporation processing to obtain leakage electrode, forming substrate/graphene two-dimensional material layer on substrate, photo-etching to obtain specific image, depositing grate insulation layer, depositing grid electrode on the upper grate insulation layer, taking nanowire core-shell structure to cover grid electrode surface, heating nanowire, top gate forming, vapor depositing, forming source surface on substrate, connecting leakage electrode with metal layer, photo-etching to obtain specific image, and removing nano wire and upper cover metal layer. The graphene radio frequency transistor comprises substrate (1) with silicon dioxide layer (11), buried active region (21) and leakage electrode (22). The substrate is provided with substrate/graphene two-dimensional material layer and source. The leakage electrode is connected with metal layer (4) connected with substrate/graphene two-dimensional material layer ends. The substrate/graphene two-dimensional material layer middle is provided with grid electrode insulation layer provided with grid electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of radio frequency transistor graphene. Substrate (1) Metal layer (4) Silicon dioxide layer (11) Buried active region (21) Leakage electrode (22)