▎ 摘　　要

NOVELTY - Preparation of high-sensitive graphene magnetic field sensor involves forming a polypropylene carbonate-hexagonal boron nitride (PPC-h-BN) structure on a substrate (S1), placing polydimethylsiloxane (PDMS) film, forming PDMS-PPC-h-BN structure, forming a graphene film on a substrate (S2), adsorbing graphene film by PDMS-PPC-h-BN structure, forming PDMS-PPC-h-BN-graphene structure, removing PPC and PDMS using acetone, performing reactive ion etching of obtained h-BN-graphene-h-BN structure, exposing, and depositing a metal to cover exposed structure. USE - Preparation of high-sensitive graphene magnetic field sensor (claimed) used in semiconductor field. ADVANTAGE - The method enables preparation of high-sensitive graphene magnetic field sensor with improves electrical performance, reduced contact resistance and controlled graphene carrier mobility, by environmentally-friendly process. DETAILED DESCRIPTION - Preparation of high-sensitive graphene magnetic field sensor involves providing substrates (S1-S3) and a polydimethylsiloxane (PDMS) film, forming a polypropylene carbonate-hexagonal boron nitride (PPC-h-BN) structure on the substrate (S1), placing the PDMS film on the PPC-h-BN structure formed on the substrate, forming PDMS-PPC-h-BN structure (P1), forming a graphene film on the substrate (S2), adsorbing graphene film by structure (P1), forming PDMS-PPC-h-BN-graphene structure (P2), forming hexagonal boron nitride (h-BN) film on a substrate (S3), covering the h-BN film on the substrate (S3) with the structure (P2), forming PDMS-PPC-h-BN-graphene-h-BN structure (P3), removing PPC and PDMS using acetone, obtaining h-BN-graphene-h-BN structure (P4), performing reactive ion etching of structure (P4), forming hall structure, exposing h-BN-graphene-h-BN cross-sectional structure, depositing a metal to cover exposed structure, and contacting one-dimensional graphene and metal electrode. The PPC-h-BN structure comprises a PPC film and h-BN film provided on the PPC film.