• 专利标题:   Vertical graphene growth device has lead that is connected with power supply through hole so that electric field is formed between upper electrode plate and lower electrode plate in vertical direction.
  • 专利号:   CN211078480-U
  • 发明人:   ZHANG J, XU S, SUN Y, GAO Z, LUO J
  • 专利权人:   BEIJING GRAPHENE INST, UNIV PEKING
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN211078480-U 24 Jul 2020 C01B-032/186 202068 Pages: 12 Chinese
  • 申请详细信息:   CN211078480-U CN22062071 26 Nov 2019
  • 优先权号:   CN22062071

▎ 摘  要

NOVELTY - providing a vertical graphene growth device; the device comprises a reaction chamber, a bracket and an upper and lower electrode plate, wherein the reaction chamber is used for performing vapour deposition reaction; the reaction chamber comprises an air inlet end and a closed end; the closed end is provided with a sealing part provided with at least two through holes; the bracket comprises two opposite side plates and a base connected with two side plates; the two side plates are provided with a bearing assembly; the bearing assembly comprises two bearing blocks oppositely set; the lower electrode plate is placed on the base; the upper electrode plate is placed on the bearing assembly, so that the upper electrode plate and the lower electrode plate are provided with a distance; the upper electrode plate and the lower electrode plate are respectively connected with a lead; the lead is connected with the power supply through the through hole, so that an electric field in the vertical direction is formed between the upper electrode plate and the lower electrode plate. introducing a vertical electric field into the gas phase deposition reaction system; the graphene can be strictly grown along the vertical direction to obtain the vertical graphene completely vertical to the substrate.