• 专利标题:   Preparation of modified graphene-polyurethane composite material with high electrical conductivity and high tensile-resistance sensitivity includes performing modified Hummers method on graphite powder to obtain graphene oxide, dissolving in N,N-dimethylformamide solvent and freeze-drying.
  • 专利号:   CN114231017-A
  • 发明人:   SUN J, WANG J, CUI D
  • 专利权人:   SHANGHAI NAT ENG RES CENT NANOTECHNOLOGY
  • 国际专利分类:   C08J005/18, C08K003/04, C08K009/04, C08L075/04
  • 专利详细信息:   CN114231017-A 25 Mar 2022 C08L-075/04 202250 Chinese
  • 申请详细信息:   CN114231017-A CN11644120 30 Dec 2021
  • 优先权号:   CN11644120

▎ 摘  要

NOVELTY - Preparation of modified graphene/polyurethane composite material with high electrical conductivity and high tensile-resistance sensitivity comprises using graphite powder as raw material, performing modified Hummers method to obtain graphene oxide, adding sodium nitrate to concentrated sulfuric acid, mixing, adding graphite powder and potassium permanganate solution, filtering, drying to obtain graphene oxide (GO), dissolving GO in N,N-dimethylformamide (DMF) solvent, freeze-drying, add thionyl chloride, refluxing for 5 hours, distilling under reduced pressure, removing excess thionyl chloride, filtering, washing with n-butanol, adding octadecylamine (ODA), using n-butanol as solvent, refluxing for 48 hours, filtering reaction product, washing with n-butanol, vacuum-drying at 60degreesC to obtain GO-ODA, dispersing GO-ODA in DMF for 3 hours, adding thermoplastic polyurethane (TPU), mixing for 2 hours, drying to obtain modified GO-ODA-TPU composite material and hot pressing. USE - The method is used for preparation of modified graphene-polyurethane composite material with high electrical conductivity and high tensile-resistance sensitivity ADVANTAGE - The composite material improves electrical conductivity and tensile-resistance sensitivity and increases electrical conductivity and pull-up performance. DESCRIPTION OF DRAWING(S) - The drawing shows a different GO-ODA content of GO-ODA/TPU composite material of the surface of the scanning electron microscope spectrum, wherein, a graph and b graph is a GO-ODA adding amount respectively 1 wt % and 2 wt % of the micro-topography.